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Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

机译:二维异质结构中的微秒暗激子谷极化记忆

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摘要

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for local excitons and tens of nanosecond for interlayer excitons. Here we show that the dark excitons in two-dimensional heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence. The long lifetime and valley polarization lifetime of the dark exciton in two-dimensional heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.
机译:过渡金属二卤化物具有谷自由度,具有光学选择规则和自旋谷锁定,使其对于谷电子器件和量子计算很有希望。对于任何一种应用,长谷极化寿命都是至关重要的。先前的结果表明,单层激子约为皮秒,局部激子约为纳秒,层间激子约为数十纳秒。在这里,我们显示了二维异质结构中的暗激子提供了微秒的谷极化记忆,这是由于磁场引起的谷混合的抑制。深色激子的寿命显示出磁场和温度的依赖性。二维异质结构中暗激子的长寿命和谷极化寿命,使它们有望用于长距离激子传输和宏观量子态生成。

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