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Coherent Phonon Transport Measurement and Controlled Acoustic Excitations Using Tunable Acoustic Phonon Source in GHz-sub THz Range with Variable Bandwidth

机译:使用可调带宽的GHz-sub THz范围内的可调声子源进行相干声子传输测量和受控声激发

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摘要

We experimentally demonstrated a narrowband acoustic phonon source with simultaneous tunabilities of the centre frequency and the spectral bandwidth in the GHz-sub THz frequency range based on photoacoustic excitation using intensity-modulated optical pulses. The centre frequency and bandwidth are tunable from 65 to 381 GHz and 17 to 73 GHz, respectively. The dispersion of the sound velocity and the attenuation of acoustic phonons in silicon dioxide (SiO2) and indium tin oxide (ITO) thin films were investigated using the acoustic phonon source. The sound velocities of SiO2 and ITO films were frequency-independent in the measured frequency range. On the other hand, the phonon attenuations of both of SiO2 and ITO films showed quadratic frequency dependences, and polycrystalline ITO showed several times larger attenuation than those in amorphous SiO2. In addition, the selective excitation of mechanical resonance modes was demonstrated in nanoscale tungsten (W) film using acoustic pulses with various centre frequencies and spectral widths.
机译:我们通过使用强度调制的光脉冲进行光声激励,实验证明了窄带声子源具有中心频率和GHz-sub THz频率范围内频谱带宽的同时可调性。中心频率和带宽分别在65至381 GHz和17至73 GHz范围内可调。利用声波声源研究了二氧化硅(SiO2)和铟锡氧化物(ITO)薄膜中声速的色散和声子的衰减。在测量的频率范围内,SiO2和ITO膜的声速与频率无关。另一方面,SiO2和ITO薄膜的声子衰减均表现出二次频率依赖性,多晶ITO的衰减比非晶SiO2大几倍。另外,使用具有各种中心频率和频谱宽度的声脉冲,在纳米级钨(W)膜中证明了机械共振模式的选择性激发。

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