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Monte Carlo calculated absorbed-dose energy dependence of EBT and EBT2 film

机译:蒙特卡洛计算了EBT和EBT2薄膜的吸收剂量能量依赖性

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>Purpose: The absorbed-dose energy dependence of GAFCHROMIC EBT and EBT2 film irradiated in photon beams is studied to understand the shape of the curves and the physics behind them.>Methods: The absorbed-dose energy dependence is calculated using the EGSnrc-based EGS_chamber and DOSRZnrc codes by calculating the ratio of dose to water to dose to active film layers at photon energies ranging from 3 keV to 18 MeV. These data are compared to the mass energy absorption coefficient ratios and the restricted stopping power ratios of water to active film materials as well as to previous experimental results.>Results: In the photon energy range of 100 keV to 18 MeV the absorbed-dose energy dependence is found to be energy independent within ±0.6%. However, below 100 keV, the absorbed-dose energy dependence of EBT varies by approximately 10% due to changes in mass energy absorption coefficient ratios of water to film materials, as well as an increase in the number of electrons being created and scattered in the central surface layer of the film. Results are found to disagree with previous experimental studies suggesting the possibility of an intrinsic energy dependence at lower photon energies. For EBT2 film the absorbed-dose energy dependence at low photon energies varies by 50% or 10% depending on the manufacturing lot due to changes in the ratio of mass energy absorption coefficients of the active emulsion layers to water.>Conclusions: Caution is recommended when using GAFCHROMIC EBT∕EBT2 films at photon energies below 100 keV. It is recommended that the effective atomic number of future films be produced as close to that of water and that thicker active layers are advantageous.
机译:>目的:研究了用光子束辐照的GAFCHROMIC EBT和EBT2薄膜的吸收剂量能量依赖性,以了解曲线的形状及其背后的物理原理。>方法:使用基于EGSnrc的EGS_chamber和DOSRZnrc代码,通过在3 keV至18 MeV的光子能量下计算剂量与水的剂量与活性膜层的剂量之比,可以计算吸收剂量的能量依赖性。将这些数据与水与活性膜材料的质量能量吸收系数比和受限的截止功率比以及先前的实验结果进行比较。>结果:在100 keV至18的光子能量范围内MeV的吸收剂量能量依赖性被发现与能量无关,在±0.6%以内。但是,在低于100 keV时,由于水与薄膜材料的质量能吸收系数比率的变化,以及EBT中吸收和产生的电子数量增加,EBT的吸收剂量能量依赖性变化了大约10%。薄膜的中央表面层。发现结果与先前的实验研究不同,后者暗示了在较低光子能量下固有能量依赖性的可能性。对于EBT2膜,由于活性乳剂层与水的质量能量吸收系数之比的变化,低光子能量下吸收剂量能量的依赖性随制造批次的不同而变化50%或10%。>结论:< / strong>在光子能量低于100 keV的情况下使用GAFCHROMIC EBT ∕ EBT2膜时,建议谨慎行事。建议将来生产的薄膜的有效原子序数与水接近,并且较厚的活性层是有利的。

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