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Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO2 Film for Emission at 614 nm

机译:从ZnO纳米晶体到嵌入SiO2膜的Eu3 +离子在614 nm处的能量转移效率

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摘要

In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu3+ ions by fabricating thin-film samples of ZnO-nc and Eu3+ ions embedded in a SiO2 matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu3+ ions which results in the radiative emission from the Eu3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu3+ ions.
机译:在这项工作中,我们通过制备薄膜样品ZnO-nc和Eu 3 + 3 + 离子的能量转移机理。 >使用低成本的溶胶-凝胶技术将离子嵌入SiO2基质中。分析了样品的时间分辨光致发光(TRPL)测量结果,以了解能量从各个ZnO-nc发射中心转移到Eu 3 + 离子的作用。从TRPL测量获得的衰减时间用于计算ZnO-nc发射中心的能量转移效率,并将这些结果与从稳态光致发光发射结果计算出的能量转移效率进行比较。这项工作的结果表明,从激子和Zn缺陷发射中心的高转移效率主要归因于从ZnO-nc到Eu 3 + 离子的能量转移,从而导致Eu的辐射发射。在614 nm处的 3 + 离子,而氧缺陷排放的能量转移最可能是由于ZnO-nc的能量转移到因掺入Eu 而产生的新缺陷而引起的。 3 + 个离子。

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