首页> 美国卫生研究院文献>The Journal of Neuroscience >Changes in Expression of Two Tetrodotoxin-Resistant Sodium Channels and Their Currents in Dorsal Root Ganglion Neurons after Sciatic Nerve Injury But Not Rhizotomy
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Changes in Expression of Two Tetrodotoxin-Resistant Sodium Channels and Their Currents in Dorsal Root Ganglion Neurons after Sciatic Nerve Injury But Not Rhizotomy

机译:坐骨神经损伤而不是根管切开术后背根神经节神经元中两个抗河豚毒素的钠通道的表达及其电流的变化

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摘要

Two TTX-resistant sodium channels, SNS and NaN, are preferentially expressed in c-type dorsal root ganglion (DRG) neurons and have been shown recently to have distinct electrophysiological signatures, SNS producing a slowly inactivating and NaN producing a persistent sodium current with a relatively hyperpolarized voltage-dependence. An attenuation of SNS and NaN transcripts has been demonstrated in small DRG neurons after transection of the sciatic nerve. However, it is not known whether changes in the currents associated with SNS and NaN or in the expression of SNS and NaN channel protein occur after axotomy of the peripheral projections of DRG neurons or whether similar changes occur after transection of the central (dorsal root) projections of DRG neurons.Peripheral and central projections of L4/5 DRG neurons in adult rats were axotomized by transection of the sciatic nerve and the L4 and L5 dorsal roots, respectively. DRG neurons were examined using immunocytochemical and patch-clamp methods 9–12 d after sciatic nerve or dorsal root lesion. Levels of SNS and NaN protein in the two types of injuries were paralleled by their respective TTX-resistant currents. There was a significant decrease in SNS and NaN signal intensity in small DRG neurons after peripheral, but not central, axotomy compared with control neurons. Likewise, there was a significant reduction in slowly inactivating and persistent TTX-resistant currents in these neurons after peripheral, but not central, axotomy compared with control neurons. These results indicate that peripheral, but not central, axotomy results in a reduction in expression of functional SNS and NaN channels in c-type DRG neurons and suggest a basis for the altered electrical properties that are observed after peripheral nerve injury.
机译:两个抗TTX的钠通道SNS和NaN优先在c型背根神经节(DRG)神经元中表达,最近已显示具有不同的电生理学特征,SNS产生缓慢的失活,而NaN产生持续的钠电流,而相对超极化的电压依赖性。坐骨神经横切后,在小的DRG神经元中已证实SNS和NaN转录的减弱。但是,尚不知道在对DRG神经元的周围投射进行轴突切开术之后,与SNS和NaN相关的电流的变化或SNS和NaN通道蛋白的表达是否发生变化,或者在中央(背根)横切后是否发生了类似的变化成年大鼠L4 / 5 DRG神经元的周围和中央投影分别通过坐骨神经横断以及L4和L5背根横切来进行。坐骨神经或背根病变后9-12 d,采用免疫细胞化学和膜片钳方法检查DRG神经元。两种类型的损伤中SNS和NaN蛋白的水平与它们各自的TTX耐受电流平行。与对照神经元相比,外围但非中心轴切术后,小的DRG神经元的SNS和NaN信号强度显着降低。同样地,与控制神经元相比,这些神经元在进行了外围但非中枢性轴索切开术后,缓慢失活和持续存在的TTX耐药电流显着减少。这些结果表明,外围但非中心性轴切术导致c型DRG神经元中功能性SNS和NaN通道的表达减少,并为周围神经损伤后观察到的电特性改变奠定了基础。

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