Computation of axon gating currents from dipole moment changes in channel subunits.

摘要

The gating polarizational currents were computed on the basis of the dipole moment changes occurring in nerve membrane ionic channel subunits. Membrane thickness and surface density of channels were the only parameters used in addition to the Hodgkin-Huxley model. The gating currents computed for membrane potentials where the Hodgkin-Huxley empirical formulae are reliable were found to be in good agreement with the available experimental data. It is demonstrated that the gating currents of the n and h subunits are responsible for the late slowly decaying gating currents.