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Solution and on-surface synthesis of structurally defined graphene nanoribbons as a new family of semiconductors

机译:解决方案和表面合成石墨烯纳米带的表面合成作为一个新的半导体家族

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摘要

Graphene nanoribbons (GNRs) are quasi-one-dimensional subunits of graphene and have open bandgaps in contrast to the zero-bandgap graphene. The high potential of GNRs as a new family of carbon-based semiconductors, e.g. for nanoelectronic and optoelectronic applications, has boosted the research attempts towards fabrication of GNRs. The predominant top-down methods such as lithographical patterning of graphene and unzipping of carbon nanotubes cannot prevent defect formation. In contrast, bottom-up chemical synthesis, starting from tailor-made molecular precursors, can achieve atomically precise GNRs. In this account, we summarize our recent research progress in the bottom-up synthesis of GNRs through three different methods, namely (1) in solution, (2) on-surface under ultrahigh vacuum (UHV) conditions, and (3) on-surface through chemical vapour deposition (CVD). The solution synthesis allows fabrication of long (>600 nm) and liquid-phase-processable GNRs that can also be functionalized at the edges. On the other hand, the on-surface synthesis under UHV enables formation of zigzag GNRs and in situ visualization of their chemical structures by atomic-resolution scanning probe microscopy. While the on-surface synthesis under UHV is typically costly and has limited scalability, the industrially viable CVD method can allow lower-cost production of large GNR films. We compare the three methods in terms of the affordable GNR structures and the resulting control of their electronic and optical properties together with post-processing for device integration. Further, we provide our views on future perspectives in the field of bottom-up GNRs.
机译:石墨烯纳米带(GNR)是石墨烯的准一维亚基,与零带隙石墨烯相比具有开放的带隙。作为新型的碳基半导体家族,GNR具有很高的潜力,例如纳米电子和光电子应用的发展,推动了GNRs制备的研究尝试。诸如石墨烯的光刻图案化和碳纳米管解压缩等主要的自上而下方法无法防止缺陷的形成。相反,从特制的分子前体开始的自下而上的化学合成可以实现原子精确的GNR。因此,我们通过三种不同的方法总结了自下而上合成GNR的最新研究进展,即(1)在溶液中,(2)在超高真空(UHV)条件下在表面上和(3)在-表面通过化学气相沉积(CVD)。溶液合成允许制造长的(> 600 nm)液相可处理的GNR,也可以在边缘进行功能化。另一方面,UHV下的表面合成能够形成之字形GNR,并通过原子分辨率扫描探针显微镜原位显示其化学结构。虽然特高压下的表面合成通常成本高昂,并且可扩展性有限,但工业上可行的CVD方法可以低成本生产大型GNR膜。我们比较了三种方法的价格合理的GNR结构,以及对它们的电子和光学性能的控制以及对器件集成的后处理。此外,我们对自下而上的GNR领域的未来观点提供了看法。

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