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Two-step model for ultrafast interfacial electron transfer: limitations of Fermi’s golden rule revealed by quantum dynamics simulations

机译:超快速界面电子转移的两步模型:量子动力学模拟揭示了费米黄金定律的局限性

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摘要

Interfacial electron transfer (IET) is one of the crucial steps in the light-harvesting process that occurs in various assemblies for solar energy conversion, such as dye-sensitized solar cells or dye-sensitized photoelectrosynthesis cells. Computational studies of IET in dye–semiconductor assemblies employ a variety of approaches, ranging from phenomenological models such as Fermi’s golden rule to more complex methods relying on explicit solutions of the time-dependent Schrödinger equation. This work investigates IET in a model pyridine–TiO2 assembly, with the goals of assessing the validity of Fermi’s golden rule for calculation of the IET rates, understanding the importance of conformational sampling in modeling the IET process, and establishing an approach to rapid computational screening of dye-sensitizers that undergo fast IET into the semiconductor. Our results suggest that IET is a two-step process, in which the electron is first transferred into the semiconductor surface states, followed by diffusion of the electron into the nanoparticle bulk states. Furthermore, while Fermi’s golden rule and related approaches are appropriate for predicting the initial IET rate (i.e., the initial transfer of an electron from the dye into the semiconductor surface states), they are not reliable for prediction of the overall IET rate. The inclusion of conformational sampling at room temperature into the model offers a more complete picture of the IET process, leading to a distribution of IET rates with a median rate faster than the IET rate obtained for the fully-optimized structure at 0 K. Finally, the two most important criteria for determination of the initial IET rate are the percentage of electron density on the linker in the excited state as well as the number of semiconductor acceptor states available at the energy of the excited state. Both of these can be obtained from relatively simple electronic structure calculations at either ab initio or semiempirical levels of theory and can thus be used for rapid screening of dyes with the desired properties.
机译:界面电子转移(IET)是光收集过程中的关键步骤之一,该过程发生在各种用于太阳能转换的组件中,例如染料敏化太阳能电池或染料敏化光电合成电池。染料-半导体组件中IET的计算研究采用了多种方法,从像费米黄金法则这样的现象学模型到依赖于随时间变化的薛定er方程的显式解的更复杂的方法。这项工作研究了吡啶-TiO2模型装配中的IET,其目的是评估费米黄金法则对计算IET率的有效性,了解构象抽样在IET过程建模中的重要性,并建立快速计算筛选的方法快速IET进入半导体的染料敏化剂的数量。我们的结果表明,IET是一个两步过程,其中电子首先转移到半导体表面态,然后电子扩散到纳米颗粒体态。此外,虽然费米的黄金法则和相关方法适用于预测初始IET速率(即,电子从染料到半导体表面态的初始转移),但对于预测整体IET速率并不可靠。将室温下的构象采样包括到模型中,可以更全面地了解IET过程,从而实现IET速率的分布,中值速率比在0 K时完全优化结构获得的IET速率快。确定初始IET速率的两个最重要的标准是处于激发态的连接子上的电子密度百分比,以及处于激发态能量时可用的半导体受体态的数量。这两种方法都可以从理论上从头到尾或半经验的水平通过相对简单的电子结构计算获得,因此可以用于快速筛选具有所需特性的染料。

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