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A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

机译:通过丝网印刷制备的用于高温测量的高耐热In2O3 / ITO薄膜热电偶

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摘要

An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.
机译:通过丝网印刷制备了In 2 O 3 / ITO薄膜热电偶。添加玻璃添加剂以改善烧结过程并增加In2O3 / ITO膜的密度。表面和横截面图像表明,随着退火时间的增加,ITO和In2O3薄膜的晶粒尺寸和致密化都增加。 In2O3 / ITO热电偶在1270°C的热结点处的热电电压为53.5 mV。热电偶的平均塞贝克系数经计算为44.5μV/°C。 In2O3 / ITO热电偶的漂移速率在1270°C下10 h的测量时间为5.44°C / h。

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