Turning an organic semiconductor into a low-resistance material by ion implantation

摘要

We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices. Two different ions, Ne and N, have been implanted and compared, to assess the effects of different reactivity within the hydrocarbon matrix. Strong modification of the electrical conductivity, stable in time, is observed following ion implantation. This effect is significantly larger for N implants (up to six orders of magnitude), which are shown to introduce stable charged species within the hydrocarbon matrix, not only damage as is the case for Ne implants. Fully operational pentacene thin film transistors have also been implanted and we show how a controlled N ion implantation process can induce stable modifications in the threshold voltage, without affecting the device performance.