The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular “fingerprint” imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus–based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature–specific detectivity higher than 4.9 × 109 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.
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机译:与重要应用(例如分子“指纹”成像,遥感,自由空间电信和光学雷达)有关的中红外(MIR)光谱范围具有特别的科学意义和技术重要性。但是,用于MIR检测的最新材料受到固有噪声和不便的制造工艺的限制,导致需要低温操作的高成本光电探测器。我们报道了基于黑色砷磷的长波长红外光电探测器,其室温操作高达8.2μm,进入了第二个MIR大气透射窗口。结合Van der Waals异质结,在3至5μm范围内可获得高于4.9×10 9 sup> Jones的室温特定探测率。光电探测器在零偏置光伏模式下工作,可实现快速的光响应和低的暗噪声。我们的范德华异质结光电探测器不仅将黑砷磷作为MIR光电应用的有希望的候选者,还为抑制光子器件中1 / f噪声的一般策略铺平了道路。
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