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Intermediate states of the Kv1.2 voltage sensor from atomistic molecular dynamics simulations

机译:基于原子分子动力学模拟的Kv1.2电压传感器的中间状态

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摘要

The response of a membrane-bound Kv1.2 ion channel to an applied transmembrane potential has been studied using molecular dynamics simulations. Channel deactivation is shown to involve three intermediate states of the voltage sensor domain (VSD), and concomitant movement of helix S4 charges 10–15 Å along the bilayer normal; the latter being enabled by zipper-like sequential pairing of S4 basic residues with neighboring VSD acidic residues and membrane-lipid head groups. During the observed sequential transitions S4 basic residues pass through the recently discovered charge transfer center with its conserved phenylalanine residue, F233. Analysis indicates that the local electric field within the VSD is focused near the F233 residue and that it remains essentially unaltered during the entire process. Overall, the present computations provide an atomistic description of VSD response to hyperpolarization, add support to the sliding helix model, and capture essential features inferred from a variety of recent experiments.
机译:已使用分子动力学模拟研究了膜结合的Kv1.2离子通道对所施加的跨膜电位的响应。通道失活被证明涉及电压传感器域(VSD)的三个中间状态,并且伴随着S4电荷沿着双层法线10-15 movement的运动;后者可通过S4基本残基与相邻的VSD酸性残基和膜脂头基的拉链状顺序配对实现。在观察到的连续过渡过程中,S4基本残基及其保守的苯丙氨酸残基F 233 穿过最近发现的电荷转移中心。分析表明,VSD内的局部电场集中在F 233 残基附近,并且在整个过程中基本上保持不变。总的来说,本计算提供了VSD对超极化响应的原子描述,为滑动螺旋模型增加了支持,并捕获了从各种最新实验中推论出的基本特征。

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