Influence of InAlN Nanospiral Structures on the Behavior of Reflected Light Polarization

摘要

The influence of structural configurations of indium aluminum nitride (InAlN) nanospirals, grown by reactive magnetron sputter epitaxy, on the transformation of light polarization are investigated in terms of varying structural chirality, growth temperatures, titanium nitride (TiN) seed (buffer) layer thickness, nanospiral thickness, and pitch. The handedness of reflected circularly polarized light in the ultraviolet–visible region corresponding to the chirality of nanospirals is demonstrated. A high degree of circular polarization (Pc) value of 0.75 is obtained from a sample consisting of 1.2 μm InAlN nanospirals grown at 650 °C. A film-like structure is formed at temperatures lower than 450 °C. At growth temperatures higher than 750 °C, less than 0.1 In-content is incorporated into the InAlN nanospirals. Both cases reveal very low Pc. A red shift of wavelength at Pc peak is found with increasing nanospiral pitch in the range of 200–300 nm. The Pc decreases to 0.37 for two-turn nanospirals with total length of 0.7 μm, attributed to insufficient constructive interference. A branch-like structure appears on the surface when the nanospirals are grown longer than 1.2 μm, which yields a low Pc around 0.5, caused by the excessive scattering of incident light.