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Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode

机译:交流驱动模式下基于无机钙钛矿量子点的低功耗红色发光二极管

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摘要

Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI3 quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound influence on coupling LEDs with household power supplies directly.
机译:无机钙钛矿因其高稳定性和可调节的带隙而成为发光器件的有前途的候选者。然而,功耗和亮度一直是钙钛矿发光二极管(PeLED)的问题。在这里,我们通过交流(AC)驱动模式提高了基于CsPbI3量子点(QDs)和p型Si衬底的PeLED的发光强度,并降低了其电流密度。对于不同的驱动电压模式(在正弦脉冲偏置或方形脉冲偏置下),观察到了频率相关的电致发光(EL)行为。在方形脉冲偏置下的器件由于界面处的热降解较小,因此在相同电压下的EL强度更高。在方形脉冲偏置驱动下的红色PeLED显示出EL强度下降现象得到了进一步改善,并且随着8.5 V以上的驱动电压的增加,积分的EL强度显示出几乎线性的增加。此外,与直流电(DC在驱动模式下,红色PeLED在交流条件下表现出更高的工作稳定性,这主要是由于减少了设备中的累积电荷。我们的工作为获得高亮度,低功耗和高稳定性的发光器件提供了有效的方法,这将对直接将LED与家用电源耦合产生深远的影响。

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