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Tailoring Electro/Optical Properties of Transparent Boron-Doped Carbon Nanowalls Grown on Quartz

机译:定制生长在石英上的掺硼碳纳米壁的电/光学性质

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摘要

Carbon nanowalls (CNWs) have attracted much attention for numerous applications in electrical devices because of their peculiar structural characteristics. However, it is possible to set synthesis parameters to vary the electrical and optical properties of such CNWs. In this paper, we demonstrate the direct growth of highly transparent boron-doped nanowalls (B-CNWs) on optical grade fused quartz. The effect of growth temperature and boron doping on the behavior of boron-doped carbon nanowalls grown on quartz was studied in particular. Temperature and boron inclusion doping level allow for direct tuning of CNW morphology. It is possible to operate with both parameters to obtain a transparent and conductive film; however, boron doping is a preferred factor to maintain the transparency in the visible region, while a higher growth temperature is more effective to improve conductance. Light transmittance and electrical conductivity are mainly influenced by growth temperature and then by boron doping. Tailoring B-CNWs has important implications for potential applications of such electrically conductive transparent electrodes designed for energy conversion and storage devices.
机译:碳纳米墙(CNW)由于其独特的结构特性而在电气设备的众多应用中引起了广泛的关注。但是,可以设置合成参数来改变此类CNW的电学和光学特性。在本文中,我们演示了光学级熔融石英上高度透明的掺硼纳米壁(B-CNW)的直接生长。特别研究了生长温度和硼掺杂对石英上生长的硼掺杂碳纳米壁行为的影响。温度和硼掺杂物掺杂水平允许直接调整CNW的形态。可以同时使用两个参数来获得透明导电膜;然而,硼掺杂是保持可见区域透明性的优选因素,而较高的生长温度对提高电导率更为有效。透光率和电导率主要受生长温度的影响,然后受硼掺杂的影响。定制B-CNW对这种设计用于能量转换和存储设备的导电透明电极的潜在应用具有重要意义。

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