Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives

摘要

Silsesquioxane (SQ) derivatives possessing intramolecular H2C = CH- groups and Si-H groups were designed as precursors for ternary silicon oxycarbide (SiOC). By using R-Si(OMe)3, H-Si(OEt)3 and (H-Si(Me)2)2O as starting compounds, SQ derivatives of VH-SQ (R = vinyl) and St-H-SQ (R = stylyl) were successfully synthesized through the conventional sol-gel route. Simultaneous thermogravimetric and mass spectroscopic analyses up to 1000 °C revealed that in situ cross-linking via hydrosilylation and demethanation of VH-SQ suppressed the evolution of gaseous hydrocarbon species to afford amorphous SiOC having a composition close to the desired stoichiometric SiO2(1−x)Cx (x = ca. 0.3) with a high yield. The effect of carbon content on the phase separation and crystallization of the SQ-derived amorphous SiOC was studied by several spectroscopic analyses and TEM observation. The results were discussed aiming to develop a novel polymer-derived ceramics (PDCs) route for in situ formation of binary β-SiC-amorphous SiO2 nanocomposites with enhanced thermal and mechanical stability.