首页> 美国卫生研究院文献>Materials >Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions
【2h】

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions

机译:具有杂质自旋轨道相互作用的拓扑材料中的弱定位和反定位

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. In this work, we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films, taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In topological insulators, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional Hikami-Larkin-Nagaoka formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In Weyl semimetal thin films having intermediate to large values of the quasiparticle mass, we show that extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. Throughout the paper, we discuss implications for experimental work, and, at the end, we provide a brief comparison with transition metal dichalcogenides.
机译:拓扑材料吸引了相当多的实验和理论关注。它们在能带结构(本征)和杂质势(本征)中都表现出很强的自旋轨道耦合,尽管后者常常被忽略。在这项工作中,我们将考虑内在和外在自旋轨道相互作用,讨论拓扑绝缘体中无质量的狄拉克费米子和Weyl半金属薄膜中的大量狄拉克费米子的弱局部化和反局部化。物理受手性自旋纹理,准粒子质量以及标量和自旋轨道散射的复杂相互作用影响。我们证明在所有拓扑材料的Bloch和动量弛豫时间中普遍存在外在自旋轨道散射中的线性项,并且对扩散常数的校正在外在自旋轨道的强度中是线性的。在具有零准粒子质量的拓扑绝缘体中,杂质自旋-轨道耦合中的线性术语导致在弱的抗局部校正中可观察到的密度依赖性。它们对磁导率产生了实质性的质变,与传统用于实验拟合的传统Hikami-Larkin-Nagaoka公式大不相同,后者根据外在自旋轨道强度预测了从弱定位到反定位的过渡。相比之下,我们的分析表明,拓扑绝缘子始终表现出较弱的反局部性。在具有中等到较大准粒子质量值的Weyl半金属薄膜中,我们显示了外在自旋轨道散射强烈影响了弱局部化向反局部化转变的边界。我们根据质量和自旋轨道散射强度生成了一个完整的相变图。在整篇论文中,我们讨论了对实验工作的意义,最后,我们与过渡金属二卤化物进行了简要比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号