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Valence and Conduction Band Densities of States ofMetal Halide Perovskites: A Combined Experimental–TheoreticalStudy

机译:态的价和导带密度金属卤化物钙钛矿:实验与理论的组合研究

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摘要

We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.
机译:我们报告了在三种金属卤化物钙钛矿上,特别是甲基铵碘化铅和溴化物以及溴化铯铯(MAPbI3,MAPbBr3,CsPbBr3)的紫外和反向光电子能谱测量的价态和导带密度,这些态分别在两个不同的机构上于不同的基板上生长。将这些与通过密度泛函理论计算的理论状态密度(DOS)进行比较。实验和理论之间达成的定性一致导致鉴定价和导带光谱特征,并允许精确确定带边缘的位置,电离能和材料的电子亲和力。比较显示这些化合物的价带最大值(VBM)处的DOS异常低,这证实并概括了先前对MAPbI3 VBM的强谱带分散和低DOS的预测。当使用电子光谱法确定卤化钙钛矿的前沿电子态时,这种低DOS值需要特别注意。

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