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EnvironmentalElectrometry with Luminescent CarbonNanotubes

机译:环境因素发光碳的静电测定纳米管

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摘要

We demonstrate that localized excitons in luminescent carbon nanotubes can be utilized to study electrostatic fluctuations in the nanotube environment with sensitivity down to the elementary charge. By monitoring the temporal evolution of the cryogenic photoluminescence from individual carbon nanotubes grown on silicon oxide and hexagonal boron nitride, we characterize the dynamics of charge trap defects for both dielectric supports. We find a one order of magnitude reduction in the photoluminescence spectral wandering for nanotubes on extended atomically flat terraces of hexagonal boron nitride. For nanotubes on hexagonal boron nitride with pronounced spectral fluctuations, our analysis suggests proximity to terrace ridges where charge fluctuators agglomerate to exhibit areal densities exceeding those of silicon oxide. Our results establish carbon nanotubes as sensitive probes of environmental charge fluctuations and highlight their potential for applications in electrometric nanodevices with all-optical readout.
机译:我们证明了发光碳纳米管中的局部激子可以用于研究纳米管环境中的静电涨落,其灵敏度低至基本电荷。通过监测在氧化硅和六方氮化硼上生长的单个碳纳米管的低温光致发光的时间演变,我们表征了两种介电载体的电荷陷阱缺陷的动力学。我们发现六方氮化硼在原子扩展的平坦平台上的纳米管的光致发光光谱漂移减少了一个数量级。对于六边形氮化硼上具有明显光谱波动的纳米管,我们的分析表明靠近梯田脊,那里的电荷涨落聚集成团,其面密度超过了氧化硅。我们的结果建立了碳纳米管作为环境电荷波动的敏感探针,并突出了其在具有全光读出功能的电纳米器件中的应用潜力。

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