DISCONTINUOUS GALERKIN TIME DOMAIN METHOD FOR SOI THIN-RIDGE WAVEGUIDE PROBLEM

摘要

A novel high-order three-dimensional(3-D)discontinuous Galerkin time domain(DGTD)method based on a normalized formulation of Maxwell′s equations is developed for modeling and simulating silicon-on-insulator(SOI)thin-ridge waveguide.The DGTD method employs unstructured meshes and piecewise high-order polynomials for spatial discretization,and Runge-Kutta methods for time integration.It is found that the numerical results of the leakage loss of SOI thin-ridge waveguide agree well with those of analytical solutions,which proves that the proposed method is an ideal tool for the quantitative analysis for SOI thin-ridge waveguide.