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基于晶闸管及IGBT的新型两电平逆变器

     

摘要

提出一种新颖的两电平电压型逆变器拓扑结构.该三相逆变器具有三个桥臂,每个桥臂由2个晶闸管、1个IGBT及4个二极管组成.晶闸管完成逆变器的相位定位,IGBT完成不同调制方式(SPWM、SVPWM、SHPWM等)的调制,二极管完成桥臂的换相.对基于晶闸管及IGBT的新型两电平逆变器的原理及拓扑结构进行详细的分析与设计,建立该新型两电平逆变器的仿真及实验平台,仿真及实验结果表明:与传统的两电平逆变器比较,可实现传统逆变器功能的同时,具有成本较低及开关损耗低的特点,在矩阵式逆变器领域更具优势,验证了所提方案的正确性.%A novel structure of two-level voltage type inverter was proposed in this paper. The three-phase inverter device has three bridge arms, which each bridge is made up of 2 thyristor, 1 IGBT and 4 diodes. Thyristor completes the phase positioning of the inverter, IGBT completes different modulation modes modulation (SPWM and SVPWM, SHPWM, et al), the Diode completes the commutation phase of the bridge arm. The principle and topological structure of the novel two-level inverter has carried on the detailed analysis and design based on the thyristor and the IGBT. The results of the set up two level inverter simulation and experiment platform show that the novel inverter can realize the traditional inverter function with the characteristics of lower cost and low switching loss, more advantages in the field of matrix converter compared with the traditional two-level inverter, which validates the correctness of the proposed scheme.

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