Boron doped graphene (BGE) was fabricated from pyrolyzation of boric acid and reduced graphene oxide (rGO) and employed as the interlayer between sulfur cathode and separator. Research results were abtained that boron atom had been introduced into graphene skeleton, and improved the rate performance of~500 mAh/g capacity at 10C.%将硼酸和还原氧化石墨烯在高温下热解,制得硼掺杂石墨烯BGE,并用于硫正极和隔膜之间的夹层材料。形貌结构表征证明,硼原子被成功掺杂到石墨烯结构中。电化学测试表明,BGE夹层提高了电极导电性。得益于其对多硫化物的物理拦截和化学吸附功能特点,BGE夹层的采用提高了电池的倍率性能,取得了在10C下500 mAh·g-1的放电比容量。
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