CZTSe吸收层的真空硒化工艺研究

摘要

A solid-state selenium source was used to prepare a CZTSe thin film by a two-step heating and selenization process. The effect of vacuum selenization device and selenization temperature on the quality of CZTSe thin films was investigated. Scanning electron microscopy, X-diffraction and Raman spectroscopy was used to analyze the quality of CZTSe films, selenizated and screened suitable selenization conditions.%本文使用固态硒源,采用两步升温硒化的方法来制备光吸收层CZTSe薄膜,主要研究了真空硒化装置及硒化温度等因素对CZTSe薄膜质量的影响.采用扫描电镜、X衍射粉末衍射仪和拉曼光谱来分析硒化后得到的CZSTe薄膜的质量,并筛选出合适的硒化条件.