A physics-based electromigration reliability model for interconnects lifetime prediction

摘要

＜正＞Dear editor,When the technology node scales down to 14 nm, the backend-of-line（BEOL） in IC design faces the more serious challenges [1, 2]. The high-density integration induced by the technology innovation increases the number of interconnecting layers and reduces the metal pitch, making the placement and routing of BEOL more difficult. Meanwhile, due to the size effects, the maximum tolerable current density in narrow dimensions of metal lines can no longer meet the requirements of driving current density in interconnects.