Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

摘要

A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition(ALD) was investigated by X-ray photoelectron spectroscopy(XPS), contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.