Numerical analysis of solid–liquid interface shape during largesize single crystalline silicon with Czochralski method

摘要

Numerical analysis is an effective tool to research the industrial Czochralski(CZ) crystal growth aiming to improve crystal quality and reduce manufacturing costs. In this study, a set of global simulations were carried out to investigate the effect of crystal-crucible rotation and pulling rate on melt convection and solid–liquid(SL) interface shape. Through analyses of the simulation data, it is found that the interface deformation and inherent stress increase during the crystal growth process The interface deflection increases from 7.4 to 51.3 mm with an increase in crystal size from 150 to 400 mm. In addition, the SL interface shape and flow pattern are sensitive to pulling rate and rotation rate. Reducing pulling rate can flat SL interface shape and add energy-consuming Interface with low deflection can be achieved by adopting certain combination of crystal and crucible rotation rates The effect of crystal rotation on SL interface shape is less significant at higher crucible rotation rates.