一种基于CMOS工艺2�4 GHz功率放大器的设计

摘要

Based on SMIC 0.18 μm RF CMOS process,a 2�4 GHz power amplifier is designed with the dual⁃feedback structure. The impedance transformer is implemented with the on⁃chip inductor.The simulation results show that,within the operating frequency range,the power gain is 24 dB,the 1 dB output compression point is 23 dBm,the peak PAE is 40%.%基于SMIC 0�18μm RF CMOS工艺，采用双负反馈结构设计了一款2�4 GHz的功率放大器。该功率放大器由驱动级和功率输出级2级组成，利用片上电感实现了级间的阻抗变换。仿真结果表明，电路在工作频率范围内，功率增益为24 dB，输出1 dB压缩点为23 dBm，峰值功率附加效率为40％。