Etching Mechanisms of CF_3 Etching Fluorinated Si:Molecular Dynamics Simulation

摘要

Molecular dynamics simulations are performed to investigate CF3 continuously bom-barding the amorphous silicon surface with energies of 10eV,50eV,100eV and 150eV at normal incidence and room temperature.The improved Tersoff-Brenner potentials were used.The simu-lation results show that the steady-state etching rates are about 0.019,0.085 and 0.1701 for 50eV,100eV and 150eV,respectively.With increasing incident energy,a transition from C-rich surface to F-rich surface is observed.In the region modified by CF3,SiF and CF species are dominant.