Etching characteristics and surface modification of InGaSnO thin films under Cl_(2)/Ar plasma

摘要

Indium gallium tin oxide(IGTO)thin films have the potential for high mobility and lowtemperature processing,which makes them suitable for applications such as display backplanes and high-voltage switching devices.However,very few studies have investigated the plasmaetching characteristics of IGTO and changes in its properties after etching.In this study,the etching characteristics of IGTO were investigated using Cl_(2)/Ar plasma,and changes in surface properties were analyzed.Results showed that the etch rate increased with an increase in the proportion of Cl_(2),with the highest etch rate observed at 69 nm min^(-1)in pure Cl_(2)plasma with a gas flow rate of 100 sccm.Furthermore,increased radio-frequency power caused a rise in the etch rate,while a process pressure of 15 m Torr was optimal.The primary etching mechanism for IGTO thin films under Cl_(2)plasma was a chemical reaction,and an increased work function indicated the occurrence of defects on the surface.In addition,the etching process reduced the surface roughness of Cl_(2)-containing plasma,whereas the etching process in pure Ar plasma increased surface roughness.This study contributes to a better understanding of the plasmaetching characteristics of IGTO and changes in its properties after etching,providing valuable insights for IGTO-based applications.