Properties of ITO:Zr films deposited by co-sputtering

摘要

ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films. ITO:Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.