Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP

摘要

The poor film formation of Cd Se/Zn S quantum dots(QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes(QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer(EML) by adding small organic molecular 4,4'-Bis(9 H-carbazol-9-yl) biphenyl(CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer(HTL) and EML. Consequently, the Cd Se/Zn S QDs:CBP based QLED achieves maximum external quantum efficiency(EQE) of 5.86%, and maximum brightness of 10 363 cd/m^(2). It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs.