Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature

摘要

Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanoparticles were characterized by means of X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), transmission electron microscope(TEM) and ultraviolet-visible(UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu_2NiSnS_4 nanoparticles were studied at various temperature. The results showed that the Cu_2NiSnS_4 nanoparticles exhibited an optimum band gap of 1.58 e V and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.