Preparation and performance of broadband antireflective sub-wavelength structures on Ge substrate

摘要

Sub-wavelength structures(SWS) were prepared on Ge substrates through photolithography and reactive ion etching(RIE) technology for broadband antireflective purposes in the long wave infrared(LWIR) waveband of 8-12 μm.Topography of the etched patterns was observed using high resolution optical microscope and atomic force microscope(AFM).Infrared transmission performance of the SWS was investigated by Fourier transform infrared(FTIR) spectrometer.Results show that the etched patterns were of high uniformity and fidelity,the SWS exhibited a good broadband antireflective performance with the increment of the average transmittance which is over 8-12 μm up to 8%.