Room-temperature light emission from an airbridge double-heterostructure microcavity of Er-doped Si photonic crystal

摘要

We experimentally demonstrate an efficient enhancement of luminescence from two-dimensional(2D) hexagonal photonic crystal(PC) airbridge double-heterostructure microcavity with Er-doped silicon(Si) as light emitters on siliconon-insulator(SOI) wafer at room temperature.A single sharp resonant peak at 1 529.6 nm dominates the photoluminescence(PL) spectrum with the pumping power of 12.5 m W.The obvious red shift and the degraded quality factor(Q-factor) of resonant peak appear with the pumping power increasing,and the maximum measured Q-factor of 4 905 is achieved at the pumping power of 1.5 m W.The resonant peak is observed to shift depending on the structural parameters of PC,which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.