A new development of indirect gating case in the differential decay curve method used for lifetime measurement has been introduced.The gate region was extended from partial shifted peak to both shifted and unshifted components.The statistics of flight and stop peaks in gating spectra was improved obviously.The reliability of this change has been tested by reanalysing the lifetime of 2^+ state in^(134) Ce.The result of 32.2(33) ps was fit well with the previous published values within the experimental uncertainty.The developed method was also used to analyse the lifetime of 2_1^+ state in^(138) Nd.
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