The characterization of low energy molecular hydrogen ion-induced defects in synthetic diamond by optical absorption

摘要

The results of optical absorption analysis of the synthetic diamonds(type Ib) which were implanted with 40 keV molecular hydrogen ions at doses of 10^15-10^17H/cm^2(at 100K),showed that the increase of optical density(OD) of modified layer(-140nm) in UV-VIS region was dependent upon the damage level caused by ion implantation process.The range of relative optical band gap(Er.opt) around 2.0eV suggested that an amorphous carbon network structure like a-C film,which probably contains some localized subtetrabedral-coordinated clusters embedded in the fourflod(sp^3) sites.was tentatively found in this layer,basing on the optical gap of carbon materials.The evolution of Er,opt with ion fluence indicated that no more hydrogenated carbon compositions were produced in as -implanted samples,while the increase of Er,opt with annealing temperature was very similar to that of hydrogen content dependence of Eopt in hydrogenately amorphous carbon(a-C:H):In addition the optical inhomogeneity of type Ib diamond has been revealed by a 2-dimension topograph in transmission mode at λ=430nm。