首页> 中文期刊> 《核聚变与等离子体物理》 >提高HT-7放电平顶阶段等离子体密度对逃逸电子的影响

提高HT-7放电平顶阶段等离子体密度对逃逸电子的影响

         

摘要

利用硬X射线探测系统监测HT-7托卡马克装置中逃逸电子轰击到装置第一壁材料时所产生的高能硬X射线,研究了在放电平顶阶段提高等离子体密度对逃逸电子行为的影响.实验结果表明,通过提高放电平顶阶段等离子体密度,HXR强度迅速降到很低的水平,这意味着能有效减少这个阶段形成的逃逸电子的数目及能量.%Using the hard X-ray (HXR) detection system during the current flat-top phase of ohmic discharge in the HT-7 tokamak,the behaviour of runaway electrons has been studied by means of measuring the HXR produced by the runaway electrons bombarding the first wall material. During plasma density increasing at the phase,we found that HXR intensity is reduced rapidly to a very low level,which implicated that the amount and energy of runaway electrons might be reduced effectively by increasing plasma density at the current flat-top phase.

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