The effects of different phosphorus (P) and silicon (Si) impurities on the recrystallization of pure copper foil were studied by means of mechanical and electrical properties test, metallographic observation and electron backscatter diffraction (EBSD). Rolled copper foil grains are elongated along the rolling direction, showing obvious processing of fibrous tissue, existed mainly in the forms of small angle grain boundaries and subgrain boundaries. The contents of P and Si have a significant influence on the recrystallization behavior of rolled pure copper foil. After annealed at 160 ℃ for 1h, the rolled copper foil with high content of P and Si showed some recrystallized structure. Rolled copper foil with lower P and Si impurity elements is completely recrystallized. The proportion of large-angle grain boundaries with orientation difference greater than 60° increases obviously, which is dominated by intact grains and large-angle grain boundaries.%利用力学和电学性能测试、金相观察、电子背散射衍射(EBSD)分析等手段研究不同磷(P)、硅(Si)杂质含量对纯铜箔材再结晶行为的影响.轧态铜箔的晶粒沿轧制方向被拉长,呈现明显的加工纤维组织,以小角度晶界、亚晶界为主.P和Si元素含量对压延纯铜箔的再结晶行为影响显著,160℃/h退火后,P和Si杂质元素含量较高的压延铜箔呈现部分再结晶组织,而P和Si杂质元素含量较低的压延铜箔为完全再结晶组织,取向差大于60°的大角度晶界占比明显增加,以完整晶粒、大角度晶界为主要特征.
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