International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education;
Institute of Microscale Optoelectronics;
Shenzhen University;
Shenzhen 518060;
China;
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province;
College of Physics&Optoelectronic Engineering;
Shenzhen University;
Shenzhen 518060;
China;
broken-gap(type-Ⅲ)heterostructure; band tailoring; single electrostatic gating; infrared photodetector; photovoltaic effects;