Key Laboratory of Microelectronic Devices and Integrated Technology;
Institute of Microelectronics;
Chinese Academy of Sciences;
Beijing 100029;
China;
University of Chinese Academy of Sciences;
Beijing 100049;
China;
Department of Mathematics and Theories;
Peng Cheng Laboratory;
No.2;
Xingke 1st Street;
Nanshan;
Shenzhen 518000;
China;
ferroelectric; Hf_(0.5)Zr_(0.5)O_(2)(HZO); Al_(2)O_(3)buffer layer; flexible;