用人工合成的硫化铟模拟实际硫化铟,研究了硫化铟在硫酸体系中常规浸出和以高锰酸钾、双氧水为氧化剂的氧化浸出的浸出效果和工艺条件.结果表明:在搅拌速度为800 r/min、物料粒度为75～96μm、液固比为300:1、温度为80℃、硫酸初始浓度为2.0 mol/L的条件下,常规浸出60min,铟的浸出率为84.9%;而在相同条件下加入氧化剂KMnO4或H2O2进行氧化浸出,只需20min就可使铟的浸出率达到94.9%或92.8%.在温度＜70℃时,氧化剂的效应起主要作用,高锰酸钾的氧化效果比双氧水更明显;在温度＞70℃时,温度效应占主导地位,两种氧化剂的影响差别不大..%By using the synthetic Indium sulfide to simulate the actual indium sulfide, the leaching effect and leaching process conditions of indium sulfide With the conventional leaching method and the oxidation leaching of potassium permanganate and hydrogen peroxide as the oxidant in sulfuric acid leaching system were studied. The results showed that under conditions of the stirring speed at 800 r/min, particle size of 75 ~ 96 μn, the liquid-solid ratio of 300: 1, the temperature at 80 ℃, and initial concentration of sulfuric acid of 2.0 mol/L for leaching 60 min, the leaching rate of indium arrived at 84. 9％ by the conventional leaching method. Under the same conditions, the leaching rate reached 94. 9％ or 92. 8％ by adding oxidant KMnO4 or H202 to realize oxidation leaching only for 20 min. At temperature ＜70 ℃, the oxidant plays a major role, where the effect of potassium permanganate is more obvious than the that of hydrogen peroxide; At temperature ＞ 70 ℃, the temperature effect plays a leading rule, and the impact of the two oxidants are less different.
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