PIN型快速恢复二极管的研究与应用

摘要

剖析了改善快速恢复二极管(Fast recovery diode,FRD)反向恢复性能的发射率控制及少子寿命控制的实施方案.探究了间接带隙半导体硅FRD与SiGe、GaN、SiC等直接带隙半导体FRD的反向恢复性能,介绍了SiC的欧姆接触技术.比较了硅FRD与碳化硅FRD的实际应用效果,发现前者的反向及动态特性均落后于后者的性能,后者特别适合于高频、高电压、大功率技术领域的应用.%Practical schemes of emitter efficiency control and lifetime control of minority carriers for improving the reverse recovery performance of PIN type fast recovery diodes (FRDs) are dissected. The reverse recovery characteristics of FRDs fabricated with indirect band gap semiconductor Si and direct band gap materials such as SiGe, GaN, SiC, etc are analyzed, the ohmic contact techniques of SiC material are briefly introduced. The different used effects between Si FRDs and SiC ones are compared, indicating that the reverse and dynamic properties of the fomers are poorer than those of the latters, and the latters can be suitable for the needs of high voltage, high switching frequency and high temperature.