Modeling electronic and optical properties of Ⅲ–Ⅴ quantum dots-selected recent developments

摘要

Electronic properties of selected quantum dot(QD)systems are surveyed based on the multi-band k·p method,which we benchmark by direct comparison to the empirical tight-binding algorithm,and we also discuss the newly developed"linear combination of quantum dot orbitals"method.Furthermore,we focus on two major complexes:First,the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1−xGax AsySb1−y/GaP QDs,and second,the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.