芯片级 PHEMT热特性等效方法

摘要

An equivalent method for thermal characterizing of GaAs PHEM T on chip level was proposed in order to evaluate the thermal characteristics of GaAs PHEMT MMIC .A chip‐level thermal simulation model was established by introducing equivalent structure of PHEM T and considering the thermal dissipation effect contributed by chip layout and vias . T he model can keep the original lateral thermal distribution of transistors ,substantially simplify the mesh of the simulation model ,and effectively enhance the accuracy and speed of peak temperature simulation for transistors on chip level .Then a GaAs PHEM T MMIC power amplifier and a GaAs PHEMT MMIC driver amplifier were modeled and simulated in ANSYS ICEPAK as examples .Infrared thermography was applied to map the temperature distribution of the two MMICs . The simulated peak temperatures accorded with the measured ones . The peak temperature difference between the measurement and the thermal simulation was within 2% by applying the proposed thermal analysis method .%为了准确估计砷化镓赝配高电子迁移率晶体管（PHEMT）的单片微波集成电路（MMIC）的热特性，提出芯片级PHEM T的热特性等效方法。该方法通过PHEM T管芯结构等效，引入芯片版图和过孔的热扩散效应，建立芯片级热仿真模型，可以在不改变管芯横向热分布的情况下，大幅简化仿真模型的网格，有效提高芯片级管芯峰值温度的仿真精度和仿真速度。基于该热特性等效方法，在ANSYS ICEPAK中对一颗GaAs PHEMT MMIC（单片微波集成电路）功率放大器芯片和一颗GaAs PHEMT MMIC驱动放大器芯片进行建模和仿真。运用红外热成像仪对两颗芯片温度进行实测，仿真与实测的芯片PHEM T峰值温度具有良好的一致性。基于该芯片级PHEM T热特性等效方法可知，芯片热仿真所得的峰值温度与实测结果的误差控制在2％之内。