基于CSMC 0.5 μm BCD(Bipolar-CMOS-DMOS)工艺设计了一种降压型大功率DC/DC转换器电路.采用峰值电流控制的电流模技术和斜坡补偿技术,有效提高了转换器的瞬态响应速度和系统环路稳定性.芯片内部集成了导通电阻小于0.18 Ω的功率MOSFET,可输出大干3.0A的连续电流.仿真和测试结果表明,在输入电压为4.7V至24V的条件下,芯片内部振荡频率为400kHz,输出功率可达10W,平均转换效率可达85%以上.整个芯片面积小于1.6mm×1.3mm,可广泛用于分布式电源系统中.%This paper presents a high output-power step-down DC/DC converter based on the CSMC O. 5 μm BCD (Bipolar-CMOS-DMOS) process. This chip provides a fast transient response and eases loop stabilization by using the current mode operation with the peak-current-control and slope compensation scheme. A power MOSFET with the conduct-resistor less than O. 18 Ω is integrated in the chip, and it can provide an over 3.0 A continuous output current. Simulation results and measurement show that the oscillating frequency is 400 kHz,that the output power is more than 10 W, and that the average efficiency is up to 85％ over a wide supply range from 4. 7 V to 24 V. The die area is less than 1.6 min× 1.3 mm, and the chip can be widely used in various distributed power systems.
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