STUDY OF SURFACE RESISTIVITY MODIFICATION IN Al_2O_3 CERAMIC IMPLANTED BY Fe^(2+)

摘要

The implanted ion range, the depth profileand the film sttucture of the implanted layer werestudied; the carrier concentration and the mobilitywere measured; the conductivity mechanism of thefilm implanted Fe into Al2O3 ceramic was discussed.The conclusion is that the implanted Fe2+ ions moveinto Al2O3 lattice and replace Al3+ to form subs-titution impurities so that the ion implanted lat-tice, as compared with the original one, presentsan effective negative charge which forms a negativecharge center. A vacancy is bound arround it, andan acceptor is introduced in the forbidden band.