首页> 中文期刊> 《武汉理工大学学报:材料科学英文版 》 >Electronic Structures and Chemical Bonds of Cobaltite and Ni-Doped

Electronic Structures and Chemical Bonds of Cobaltite and Ni-Doped

             

摘要

The relation among electronic structure, chemical bond and thermoelectric property of Ca3Co2O6 and Ni-doped was studied by density function theory and discrete variation method(DFT-DVM). The results indicate that the highest valence band(HVB) and the lowest conduction band(LCB) are mainly attributed to Co3d, Ni3d and O2p atomic orbitals. The property of a semiconductor is shown from the gap between HVB and LCB. The gap of Ni-doped one is less than that of Ca3Co2O6. The non-metal bond or ceramic characteristic of Ni-doped one is weaker than that of Ca3Co2O6, but the metal characteristics of Ni-doped one are stronger than those of Ca3Co2O6. The thermoelectric property should be improved by adding Ni element into the system of Ca3Co2O6.

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