Monte Carlo Simulation of the Coaxial Electrons Backscattering from Thin Films

摘要

By using the Monte Carlo method, we simulated the trajectories of coaxial backscattering electrons corresponding to a new type of scanning electron microscope. From the calculated results, we obtain a universal expression, which describes with good accuracy the backscattering coefficient versus film thickness under all conditions used. By measuring the coaxial backscattering coefficient and using this universal formula, the thickness of thin films can be determined if the composition is known.