Study of Measurement Theory and Method of Heterojunction Built-in Potential

摘要

The new method for determining W（junction width）versus N_eff-1/2(N_eff is theeffective space charge density)is proposed for precise measurement of built-in potential V_n.It is strictly proved that heterojunction built-in potential V_n can be calculated from the slopeof W-N_eff-1/2 curve.At zero bias,the measured V_n of a CdS/CuInSe₂ heterojunction was 0.437 V for sample CIS and 1.0293 V for sample CIS-2.Our measurement results demon-strate that the illumination does not alter V_n but makes the.heterojunction narrower.Thebuilt-in potential is an inherent parameter for heterojunction.Moreover,using W-N_eff-1/2method,the bias effect on the electric characteristic of heterojunction and other parameterscan be researched in detail.