测量了单晶铝在阳极氧化过程中的电流密度—时间曲线.曲线可分为3部分,分别对应多孔氧化铝形成的3个阶段.初始电流密度的下降是阻挡层的形成引起的;随后电流密度的升高是孔的形成造成的;当落在阻挡层上的电压降足够低,使得质子可以进入阻挡层,这时孔的雏形形成;当上升过程结束,电流密度达到稳定值后,孔的分布已完成.%The current-time curves which are characteristic of porousaluminum anidization were studied.The fall of current is succeeded by a rise to a constant value.The fall is interpreted as caused by barrier-layer formation and the rise by pore initiation when the field across the barrier layer has fallen low enough to allow the entry of protons into the film.When the current density finally reaches the steady state,the pore distribtion is complete.
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